制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 256 k x 16 |
访问时间 | Access Time | 15 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 170 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-48 |
封装 | Packaging | Reel |
高度 | Height | 1.2 mm |
长度 | Length | 9 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V416S15 |
类型 | Type | Asynchronous |
宽度 | Width | 9 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 2000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | M95M01-DFDW6TP | 下单限制 | 0 | Renesas Electronics | |
2 | MT40A256M16LY-075:F TR | 0 | Renesas Electronics | ||
3 | MT52L4DAPQ-DC TR | 0 | Renesas Electronics | ||
4 | SST26WF080BAT-104I/SN | 0 | Renesas Electronics | ||
5 | S29GL512T10TFI030 | 0 | Renesas Electronics | ||
6 | CY7C1061G30-10BV1XE | 0 | Renesas Electronics | ||
7 | GS81302T11GE-400 | 0 | Renesas Electronics | ||
8 | CYRS1544AV18-250GCMB | 0 | Renesas Electronics | ||
9 | VTDU42PI016G | 0 | Renesas Electronics | ||
10 | 93LC76AT-I/OT | 0 | Renesas Electronics | ||
11 | 24LC02BH-E/ST | 0 | Renesas Electronics | ||
12 | MT29F4T08EULCEM4-T:C TR | 0 | Renesas Electronics | ||
13 | S29GL128S13FAEV13 | 0 | Renesas Electronics | ||
14 | W97BH6MBVA2I | 0 | Renesas Electronics | ||
15 | GS832218AGD-150V | 0 | Renesas Electronics | ||
16 | GS8162Z18DB-150V | 0 | Renesas Electronics | ||
17 | GS8342DT11BD-550 | 0 | Renesas Electronics | ||
18 | GS81313LD36GK-714I | 0 | Renesas Electronics | ||
19 | GS8322Z36AB-333V | 0 | Renesas Electronics | ||
20 | IS61QDPB42M36A1-500M3LI | 0 | Renesas Electronics |