制造商 | Manufacturer | Micron Technology |
RoHS | Rohs | Y |
类型 | Type | SDRAM - DDR1 |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TSOP-66 |
数据总线宽度 | Data Bus Width | 16 bit |
组织 | Organization | 16 M x 16 |
存储容量 | Memory Size | 256 Mbit |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
访问时间 | Access Time | 700 ps |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 2.5 V |
电源电流—最大值 | Supply Current_Max | 175 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
系列 | Series | MT46V |
封装 | Packaging | Tray |
商标 | Brand | Micron |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | DRAM |
标准包装数量 | Standard Pack Qty | 1080 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | M95040-WMN6P | 0 | Micron Technology | ||
2 | GS8342DT37BD-300 | 0 | Micron Technology | ||
3 | IS61LV12824-8TQ | 0 | Micron Technology | ||
4 | MT41K512M16VRN-107 AAT:P | 2年内 | 1919 | Micron Technology | |
5 | 71321LA55TFG8 | 0 | Micron Technology | ||
6 | S29GL128P11TFI013 | 0 | Micron Technology | ||
7 | MT29F2G01ABBGD12-AAT:G TR | 0 | Micron Technology | ||
8 | SFUI2048J1AB2TO-C-MS-211-STD | 0 | Micron Technology | ||
9 | GS81302S18E-375 | 0 | Micron Technology | ||
10 | 25LC040AT-I/OT | 0 | Micron Technology | ||
11 | W631GU6MB12I TR | 0 | Micron Technology | ||
12 | AS4C64M4SA-7TCN | 0 | Micron Technology | ||
13 | W94AD6KBHX6I | 0 | Micron Technology | ||
14 | AT24C64BN-10SU-2.7 | 0 | Micron Technology | ||
15 | CY7C1021D-10ZSXI | 0 | Micron Technology | ||
16 | GS81302DT10GE-350I | 0 | Micron Technology | ||
17 | GS8662QT07BGD-357I | 0 | Micron Technology | ||
18 | CY62128EV30LL-45SXI | n/a | 149 | Micron Technology | |
19 | 7164S25TPG | 0 | Micron Technology | ||
20 | IS43LR32160B-6BL-TR | 0 | Micron Technology |