制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 140 mA, 150 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS882Z18CGD |
类型 | Type | NBT Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 72 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | NBT SRAM |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS880F18CGT-5.5 | 0 | GSI Technology | ||
2 | 24LC16BT-E/ST | 0 | GSI Technology | ||
3 | 25C080-I/P | 0 | GSI Technology | ||
4 | MT40A1G16KNR-075:E | 8 | GSI Technology | ||
5 | W29N02KZDIBF | 0 | GSI Technology | ||
6 | 25LC020AT-I/SN | 0 | GSI Technology | ||
7 | CAV25020YE-GT3 | 0 | GSI Technology | ||
8 | BR24S08FV-WE2 | NA | 100 | GSI Technology | |
9 | 40060427 | 0 | GSI Technology | ||
10 | DS1230Y-85+ | 0 | GSI Technology | ||
11 | MT25QU128ABB1ESE-0AUT | 0 | GSI Technology | ||
12 | AT25XE041D-SHN-B | 0 | GSI Technology | ||
13 | CY62167GN30-45BVXI | 0 | GSI Technology | ||
14 | 25AA512-I/MF | 0 | GSI Technology | ||
15 | S-93C66BD0I-T8T1U | 0 | GSI Technology | ||
16 | LE25S81FDTWG | 0 | GSI Technology | ||
17 | GS88237CGB-200V | 0 | GSI Technology | ||
18 | GS8662Q20CGD-500 | 0 | GSI Technology | ||
19 | BR24L01AF-WE2 | NA | 50 | GSI Technology | |
20 | GS8161Z32DD-150IV | 0 | GSI Technology |