制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | N |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 120 mA, 130 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-119 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS882Z18CB |
类型 | Type | NBT Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 42 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | NBT SRAM |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 71V30S55TFG | 0 | GSI Technology | ||
2 | BR24C16A-10TU-2.7 | 0 | GSI Technology | ||
3 | SST26VF020AT-104I/SN | 0 | GSI Technology | ||
4 | AS4C4M32SA-7TCNTR | 0 | GSI Technology | ||
5 | GS8662Q10BGD-200 | 0 | GSI Technology | ||
6 | S26KL256SDABHA030 | 0 | GSI Technology | ||
7 | GS81313LT36GK-500 | 0 | GSI Technology | ||
8 | GS8342TT06BGD-550I | 0 | GSI Technology | ||
9 | SST25VF080B-80-4I-QAE-T | 0 | GSI Technology | ||
10 | AS6C4008A-55SINTR | 0 | GSI Technology | ||
11 | GS81302DT07E-350I | 0 | GSI Technology | ||
12 | W25Q80DVSNIG | 1270 | GSI Technology | ||
13 | MTFC16GAKAECN-5M AIT | 0 | GSI Technology | ||
14 | GLS85LS1064E-S-I-LBJE-ND118 | 0 | GSI Technology | ||
15 | MT53E768M32D4DT-046 AAT:E TR | 0 | GSI Technology | ||
16 | 72V3642L10PFG | 0 | GSI Technology | ||
17 | MT53D4DGSB-DC | 0 | GSI Technology | ||
18 | 5962-3829414MXA | 0 | GSI Technology | ||
19 | W25Q64JWSSIM TR | 0 | GSI Technology | ||
20 | GS8161Z36DD-333V | 0 | GSI Technology |