制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 256 k x 36 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 300 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 185 mA, 245 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-119 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS88236CGB |
类型 | Type | Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 42 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8662D06BD-450I | 0 | GSI Technology | ||
2 | IS49NLS93200-33BLI | 0 | GSI Technology | ||
3 | IS25LE512M-RMLE | 0 | GSI Technology | ||
4 | W66CL2NQUAHI | 0 | GSI Technology | ||
5 | CY7C25632KV18-450BZC | 0 | GSI Technology | ||
6 | GS864036GT-250V | 0 | GSI Technology | ||
7 | MT53E2D1AFW-DC | 0 | GSI Technology | ||
8 | GS832236AGB-333IV | 0 | GSI Technology | ||
9 | S34SL04G200BHI000 | 0 | GSI Technology | ||
10 | IS43TR82560CL-125KBLI-TR | 0 | GSI Technology | ||
11 | S34MS08G201BHI000 | 0 | GSI Technology | ||
12 | W634GU6NB-15 TR | 0 | GSI Technology | ||
13 | MT29F4G01AAADDHC-ITX:D | 0 | GSI Technology | ||
14 | IS61LV6416-10TL | 70 | GSI Technology | ||
15 | GS81302DT10E-300 | 0 | GSI Technology | ||
16 | S29GL128S90DHSS33 | 0 | GSI Technology | ||
17 | S29GL512T11FAIV10 | 0 | GSI Technology | ||
18 | S25HS512TDPBHB010 | 0 | GSI Technology | ||
19 | 71V3557S75BGG8 | 0 | GSI Technology | ||
20 | 7203L30TDB | 0 | GSI Technology |