制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 5.5 ns |
最大时钟频率 | Maximum Clock Frequency | 250 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 145 mA, 180 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS88218CGD |
类型 | Type | Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 72 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8342TT37BGD-333 | 0 | GSI Technology | ||
2 | GS8342QT10BGD-250 | 0 | GSI Technology | ||
3 | S29GL128S11FHIV20 | 0 | GSI Technology | ||
4 | DS1330WP-150+ | 0 | GSI Technology | ||
5 | 24LC512T-E/SN | 09-26-16 | 3200 | GSI Technology | |
6 | S29GL01GT11FHIV10 | 2年内 | 10000 | GSI Technology | |
7 | GS8342T09BGD-350I | 0 | GSI Technology | ||
8 | GS8161E32DGD-333IV | 0 | GSI Technology | ||
9 | GS8342TT20BGD-550 | 0 | GSI Technology | ||
10 | 25AA080AT-I/MS | 0 | GSI Technology | ||
11 | GS8182R09BGD-200I | 0 | GSI Technology | ||
12 | DS28E01P-100+ | 23+ | 0 | GSI Technology | |
13 | MT42L64M32D2HE-18 AAT:D | 0 | GSI Technology | ||
14 | CY7C1356C-250AXC | 0 | GSI Technology | ||
15 | S34ML01G100TFI900 | 0 | GSI Technology | ||
16 | GS882Z18CGD-300 | 0 | GSI Technology | ||
17 | M95128-DFCS6TP/K | 0 | GSI Technology | ||
18 | S29WS256P0SBFW000 | 0 | GSI Technology | ||
19 | BR93G86FVT-3AGE2 | NA | 100 | GSI Technology | |
20 | BR24G256FV-3AGTE2 | NA | 80 | GSI Technology |