制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 256 k x 36 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 160 mA, 190 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS881E36CGD |
类型 | Type | DCD Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 72 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 24AA025-I/P | 0 | GSI Technology | ||
2 | S25FL128SDPBHVC00 | 0 | GSI Technology | ||
3 | AT45DQ321-SHFHJ-T | 0 | GSI Technology | ||
4 | GS8342Q10BD-300M | 0 | GSI Technology | ||
5 | GS8342D06BD-500M | 0 | GSI Technology | ||
6 | GS8322Z18AGB-375 | 0 | GSI Technology | ||
7 | GS816218DD-333IV | 0 | GSI Technology | ||
8 | AS7C34098A-10JINTR | 0 | GSI Technology | ||
9 | W9816G6JB-6 | 0 | GSI Technology | ||
10 | IS42SM32200M-75BLI | 0 | GSI Technology | ||
11 | MT41K512M16HA-125 IT:A | 6000 | GSI Technology | ||
12 | CYPT2642KV18-250GCMB | 0 | GSI Technology | ||
13 | GS8342D11BGD-450I | 0 | GSI Technology | ||
14 | GS8182D08BGD-200 | 0 | GSI Technology | ||
15 | GD5F1GQ4RF9IGR | 0 | GSI Technology | ||
16 | GS8182S09BD-333 | 0 | GSI Technology | ||
17 | GS842Z36CGB-166 | 0 | GSI Technology | ||
18 | SST25VF020B-80-4C-QAE-T | 0 | GSI Technology | ||
19 | AP-UM001GR13CS-2MST | 0 | GSI Technology | ||
20 | BR93G86FVJ-3BGTE2 | NA | 100 | GSI Technology |