制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 5.5 ns |
最大时钟频率 | Maximum Clock Frequency | 250 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 145 mA, 185 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS881E18CGT |
类型 | Type | DCD |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 66 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 72221L15JGI8 | 0 | GSI Technology | ||
2 | GS81302T07GE-450 | 0 | GSI Technology | ||
3 | MT48LC4M32B2P-6A XIT:L TR | 0 | GSI Technology | ||
4 | 71V65903S85PFG | 0 | GSI Technology | ||
5 | GS8322Z18AB-333 | 0 | GSI Technology | ||
6 | AS4C4M32D1A-5BINTR | 0 | GSI Technology | ||
7 | IS43TR16512AL-125KBL-TR | 0 | GSI Technology | ||
8 | MT29VZZZAD8GQFSL-046 W.9R8 | 0 | GSI Technology | ||
9 | IS49NLC18160-33B | 0 | GSI Technology | ||
10 | RMLV0816BGSD-4S2#AA1 | 0 | GSI Technology | ||
11 | S34MS01G104BHI010 | 0 | GSI Technology | ||
12 | MT29F8T08ESLCEG4-R:C | 0 | GSI Technology | ||
13 | GS81302D08E-350 | 0 | GSI Technology | ||
14 | MTEDCBR016SAJ-1N2IT | 0 | GSI Technology | ||
15 | IS42SM16400M-75BLI-TR | 0 | GSI Technology | ||
16 | IS62WV12816EALL-55BLI-TR | 0 | GSI Technology | ||
17 | GS88118CGD-333I | 0 | GSI Technology | ||
18 | MT53B2DATG-DC | 0 | GSI Technology | ||
19 | 71V67603S166BQ | 0 | GSI Technology | ||
20 | 24AA52T-I/SN | 0 | GSI Technology |