制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 256 k x 36 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 145 mA, 170 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS88136CGD |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 66 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MT47H32M16NF-25E AAT:H TR | 0 | GSI Technology | ||
2 | 70V631S10BFG8 | 0 | GSI Technology | ||
3 | IS42S32160F-7TLI | 0 | GSI Technology | ||
4 | S34ML16G202TFI203 | n/a | 5000 | GSI Technology | |
5 | IS61DDPB22M36A-400M3L | 0 | GSI Technology | ||
6 | IS46TR16512B-107MBLA1-TR | 0 | GSI Technology | ||
7 | 71V67903S80BQI | 0 | GSI Technology | ||
8 | SST25VF020-20-4I-SAE | 0 | GSI Technology | ||
9 | GS81302QT10E-318I | 0 | GSI Technology | ||
10 | 71V416S12BEI | 0 | GSI Technology | ||
11 | 93AA46AT-I/MC | 0 | GSI Technology | ||
12 | W25Q16JVSNIM TR | 0 | GSI Technology | ||
13 | AT28C256E-25LM/883-815 | 0 | GSI Technology | ||
14 | M93C66-RDW3TP/K | 310 | GSI Technology | ||
15 | S25FL128SAGMFA003 | 0 | GSI Technology | ||
16 | 93AA86C-I/P | 0 | GSI Technology | ||
17 | IS61VPS51236A-200TQI-TR | 0 | GSI Technology | ||
18 | W94AD6KBHX5I TR | 0 | GSI Technology | ||
19 | 70V07S35G | 0 | GSI Technology | ||
20 | 71V3559S80BQI | 0 | GSI Technology |