制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 256 k x 32 |
访问时间 | Access Time | 5.5 ns |
最大时钟频率 | Maximum Clock Frequency | 250 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 160 mA, 200 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS88132CGT |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 66 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MT53B512M32D2DS-062 AAT:C | 0 | GSI Technology | ||
2 | GS88218CGD-200IV | 0 | GSI Technology | ||
3 | SDINBDA6-16G-I | 0 | GSI Technology | ||
4 | SST26WF064C-104I/SO | 0 | GSI Technology | ||
5 | W25Q80DLSNIG | 0 | GSI Technology | ||
6 | GS8673ED18BK-675 | 0 | GSI Technology | ||
7 | IS61LF204818B-7.5TQLI-TR | 0 | GSI Technology | ||
8 | S99ML04G2B040 | 0 | GSI Technology | ||
9 | M95080-WMN6P | 0 | GSI Technology | ||
10 | 24CS512T-I/MS | 0 | GSI Technology | ||
11 | IS45S32200L-7TLA2 | 0 | GSI Technology | ||
12 | MT29F1T08EEHAFJ4-3ITF:A | 0 | GSI Technology | ||
13 | 70T3319S166BC8 | 0 | GSI Technology | ||
14 | GS81302TT19E-333 | 0 | GSI Technology | ||
15 | AS4C512M16D3L-12BCN | 0 | GSI Technology | ||
16 | S72XS256RE0AHBJ13 | 0 | GSI Technology | ||
17 | 25LC040AT-I/SN | n/a | 3300 | GSI Technology | |
18 | MT29VZZZ7D8GQKSL-046 W.12Y | 0 | GSI Technology | ||
19 | IS49RL18320-107BL | 0 | GSI Technology | ||
20 | DS2431P-A1+T | 0 | GSI Technology |