制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 5.5 ns |
最大时钟频率 | Maximum Clock Frequency | 250 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 145 mA, 185 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS88118CGT |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 66 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 93AA86AT-I/OT | 1340 | GSI Technology | ||
2 | S26KS128SDABHB030 | 0 | GSI Technology | ||
3 | GS81302QT37GE-300I | 0 | GSI Technology | ||
4 | MT29VZZZBD9FQKPR-046 W.G9J | 0 | GSI Technology | ||
5 | W634GG6NB-09 TR | 0 | GSI Technology | ||
6 | S25FL256SAGBHMC10 | 0 | GSI Technology | ||
7 | GS8320Z18AGT-375I | 0 | GSI Technology | ||
8 | S29GL512S11FHI010 | 0 | GSI Technology | ||
9 | DS28E80Q+U | 0 | GSI Technology | ||
10 | S26KL256SDABHB020 | 0 | GSI Technology | ||
11 | 72V221L15PFGI | 0 | GSI Technology | ||
12 | CY62126EV30LL-55ZSXE | 0 | GSI Technology | ||
13 | GS8662Q37BGD-200I | 0 | GSI Technology | ||
14 | 25AA040/P | 0 | GSI Technology | ||
15 | GS8662Q18BD-300M | 0 | GSI Technology | ||
16 | MT25QU128ABA8E14-0SIT | 0 | GSI Technology | ||
17 | 70V7519S133BCI8 | 0 | GSI Technology | ||
18 | 70V658S10DRG | 0 | GSI Technology | ||
19 | AS4C8M16SA-7BCNTR | 0 | GSI Technology | ||
20 | SST26WF080BA-104I/MF | 0 | GSI Technology |