制造商 | Manufacturer | GSI Technology |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 5.5 ns |
最大时钟频率 | Maximum Clock Frequency | 250 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 145 mA, 185 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS88118CD |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 66 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | S40FC004C1B1C00000 | 446 | GSI Technology | ||
2 | NV24C256MUW3VTBG | 2220+ | 1501 | GSI Technology | |
3 | AT24CS02-MAHM-E | 0 | GSI Technology | ||
4 | 93LC46XT-I/SN | 0 | GSI Technology | ||
5 | IS45S32400F-6TLA2-TR | 0 | GSI Technology | ||
6 | SDINBDG4-16G-XI1 | 3 | GSI Technology | ||
7 | IS61LPS51218A-200TQI-TR | 0 | GSI Technology | ||
8 | 2913159 | 0 | GSI Technology | ||
9 | GS8642Z18B-200I | 0 | GSI Technology | ||
10 | IS46DR16640C-3DBLA1 | 0 | GSI Technology | ||
11 | S99GL128P0173 | 0 | GSI Technology | ||
12 | AT28C256-20FM/883-815 | 0 | GSI Technology | ||
13 | GS8342T38BD-400 | 0 | GSI Technology | ||
14 | S70GL02GS12FHIV13 | 0 | GSI Technology | ||
15 | GS8642Z36GB-250 | 0 | GSI Technology | ||
16 | S29GL512S10TFI023 | 0 | GSI Technology | ||
17 | MT29F16G08ABACAWP-ITZ:C | 2177 | GSI Technology | ||
18 | GS8672Q18BE-300M | 0 | GSI Technology | ||
19 | MT53E2D1AFW-DC TR | 0 | GSI Technology | ||
20 | 47C16-I/P | 0 | GSI Technology |