制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 256 k x 32 |
访问时间 | Access Time | 5.5 ns |
最大时钟频率 | Maximum Clock Frequency | 250 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 140 mA, 180 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS88032CGT |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 66 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | AS4C2M32S-6BINTR | 0 | GSI Technology | ||
2 | S25FL512SDPBHI313 | 0 | GSI Technology | ||
3 | GS880Z36CGT-150I | 1902 | 329 | GSI Technology | |
4 | GS832236AD-333I | 0 | GSI Technology | ||
5 | GS8662DT06BD-550I | 0 | GSI Technology | ||
6 | 71V416S15YGI8 | 0 | GSI Technology | ||
7 | CY14E256LA-SZ45XQT | 0 | GSI Technology | ||
8 | M24C64-DFMC6TG | 0 | GSI Technology | ||
9 | IS34ML02G081-TLI-TR | 0 | GSI Technology | ||
10 | S29AL016J55TFI020 | 0 | GSI Technology | ||
11 | IS25WP032D-JKLE-TR | 0 | GSI Technology | ||
12 | GS82582QT19GE-300 | 0 | GSI Technology | ||
13 | GS84032CGT-150 | 0 | GSI Technology | ||
14 | GS81314LD18GK-120 | 0 | GSI Technology | ||
15 | GS74104AGP-10 | 0 | GSI Technology | ||
16 | IS43R83200F-6TL-TR | 0 | GSI Technology | ||
17 | IS43TR16640ED-15HBLI | 0 | GSI Technology | ||
18 | W25M02GWTBIG TR | 0 | GSI Technology | ||
19 | SN74ACT2229DWR | 0 | GSI Technology | ||
20 | DS28E80Q+U | 0 | GSI Technology |