制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 36 Mbit |
组织 | Organization | 4 M x 9 |
最大时钟频率 | Maximum Clock Frequency | 400 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 1.9 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 600 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | DDR-II |
系列 | Series | GS8342T10BGD |
类型 | Type | SigmaDDR-II+ B2 |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 15 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SigmaDDR-II+ |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 93LC76/SN | 0 | GSI Technology | ||
2 | 25LC160BT-I/MS | 0 | GSI Technology | ||
3 | 34AA04T-E/MNY | 2238 | 3300 | GSI Technology | |
4 | CY62148G18-55ZSXI | 0 | GSI Technology | ||
5 | GLS29EE512-70-4C-NHE | n/a | 0 | GSI Technology | |
6 | S34ML02G100TFI9C0 | 0 | GSI Technology | ||
7 | S25FL512SDPMFIG10 | 0 | GSI Technology | ||
8 | GS8322Z18AB-150IV | 0 | GSI Technology | ||
9 | TC58NVG1S3EBAI5 | 0 | GSI Technology | ||
10 | 24LCS52-I/MS | 0 | GSI Technology | ||
11 | 24VL014HT/SN | 0 | GSI Technology | ||
12 | SST39VF1681-70-4I-B3KE | 0 | GSI Technology | ||
13 | GS81302T19AGD-375I | 0 | GSI Technology | ||
14 | GS8182D08BGD-375I | 0 | GSI Technology | ||
15 | 71V416L12PHG | 0 | GSI Technology | ||
16 | CY7C1414KV18-250BZXI | NA | 3660 | GSI Technology | |
17 | 24FC04H-E/P | 0 | GSI Technology | ||
18 | GS8342T20BGD-450 | 0 | GSI Technology | ||
19 | CY7C1413KV18-300BZXC | 0 | GSI Technology | ||
20 | W632GU8NB15I | 0 | GSI Technology |