制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 36 Mbit |
组织 | Organization | 512 k x 72 |
访问时间 | Access Time | 8.5 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 220 mA, 280 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-209 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS832272GC |
类型 | Type | SCD/DCD Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 14 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS840Z36CGT-100I | 0 | GSI Technology | ||
2 | 72V2105L15PFGI8 | 0 | GSI Technology | ||
3 | GS816118DD-333V | 0 | GSI Technology | ||
4 | GS880Z32CGT-150IV | 0 | GSI Technology | ||
5 | MT62F768M64D4EJ-031 WT ES:A | 0 | GSI Technology | ||
6 | CY62157H30-55ZSXET | 0 | GSI Technology | ||
7 | 71V65603S100PFGI8 | 0 | GSI Technology | ||
8 | AS4C128M32MD2A-18BIN | 0 | GSI Technology | ||
9 | SST26VF032BT-104V/MF | 0 | GSI Technology | ||
10 | GS832136AD-250V | 0 | GSI Technology | ||
11 | M24C32-FMH6TG | 0 | GSI Technology | ||
12 | GS8662DT07BD-400 | 0 | GSI Technology | ||
13 | S29GL256S10TFI020 | 0 | GSI Technology | ||
14 | 70T631S12BCI8 | 0 | GSI Technology | ||
15 | GD5F1GQ4RF9IGY | 0 | GSI Technology | ||
16 | GS81302Q19E-250I | 0 | GSI Technology | ||
17 | 71V632S5PFGI | 0 | GSI Technology | ||
18 | SST39VF402C-70-4C-EKE-T | 0 | GSI Technology | ||
19 | MT29F2G16ABAEAWP-AAT:E | 0 | GSI Technology | ||
20 | BR25L010FVT-WE2 | 0 | GSI Technology |