制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | N |
存储容量 | Memory Size | 36 Mbit |
组织 | Organization | 1 M x 32 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 215 mA, 250 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8321E32AD |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8662Q36BGD-200 | 0 | GSI Technology | ||
2 | 72V3680L7-5BBI | 0 | GSI Technology | ||
3 | IS66WVE2M16TCLL-70BLI-TR | 0 | GSI Technology | ||
4 | 40060325-002 | 0 | GSI Technology | ||
5 | 40060127-002 | 0 | GSI Technology | ||
6 | GS8662DT20BD-550I | 0 | GSI Technology | ||
7 | MT35XU01GBBA1G12-0AUT TR | 0 | GSI Technology | ||
8 | 7204L12JG8 | 0 | GSI Technology | ||
9 | S25FL256LAGBHV033 | 0 | GSI Technology | ||
10 | AS6C2008A-55BIN | 0 | GSI Technology | ||
11 | S34ML04G300BHA103 | 0 | GSI Technology | ||
12 | GS8162Z72CGC-333 | 0 | GSI Technology | ||
13 | MT29F2G01ABAGDSF-AAT:G TR | 0 | GSI Technology | ||
14 | CY7C1425KV18-300BZXC | 0 | GSI Technology | ||
15 | CY15B004Q-SXE | 0 | GSI Technology | ||
16 | W9816G6JB-7I TR | 0 | GSI Technology | ||
17 | MT28FW01GABA1LJS-0AAT TR | 0 | GSI Technology | ||
18 | GS8342T10BD-350 | 0 | GSI Technology | ||
19 | SST39VF801C-70-4I-B3KE | 0 | GSI Technology | ||
20 | S25FL512SDSMFV010 | 0 | GSI Technology |