制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 36 Mbit |
组织 | Organization | 2 M x 18 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 205 mA, 240 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8320Z18AGT |
类型 | Type | NBT Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | NBT SRAM |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS81284Z18B-250 | 0 | GSI Technology | ||
2 | IS45S32400F-7TLA2-TR | 0 | GSI Technology | ||
3 | GS8342TT20BD-350 | 0 | GSI Technology | ||
4 | MT44K32M36RB-107E:A TR | 0 | GSI Technology | ||
5 | CY62162G30-45BGXI | 0 | GSI Technology | ||
6 | 71V3556SA166BQG | 0 | GSI Technology | ||
7 | MT53E768M32D4NQ-046 WT:E TR | 0 | GSI Technology | ||
8 | IS46DR16640B-25DBLA2-TR | 0 | GSI Technology | ||
9 | IS64WV6416EEBLL-10BLA3-TR | 0 | GSI Technology | ||
10 | S25FL256SAGMFB003 | 0 | GSI Technology | ||
11 | GS8662Q19BD-333 | 0 | GSI Technology | ||
12 | S34ML01G100TFI0C3 | 0 | GSI Technology | ||
13 | GS81284Z36GB-167IV | 0 | GSI Technology | ||
14 | GS8161Z18DD-250 | 0 | GSI Technology | ||
15 | AP-UM256MR23CS-2T | 0 | GSI Technology | ||
16 | MT53E1536M32D4DE-046 AAT:B | 0 | GSI Technology | ||
17 | BR93G86F-3BGTE2 | NA | 100 | GSI Technology | |
18 | MT29VZZZBC9FQOPR-053 W ES.G9G | 0 | GSI Technology | ||
19 | MT53E512M32D2FW-046 AAT:D | 0 | GSI Technology | ||
20 | GS81302DT20GE-400I | 0 | GSI Technology |