制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 36 Mbit |
组织 | Organization | 1 M x 36 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 333 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 270 mA, 355 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8320E36AGT |
类型 | Type | DCD Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8161E18DGT-400I | 0 | GSI Technology | ||
2 | 723633L12PFG8 | 0 | GSI Technology | ||
3 | 71V67602S166PFG8 | 0 | GSI Technology | ||
4 | GS8342S36BGD-250 | 0 | GSI Technology | ||
5 | W634GG6NB15I TR | 0 | GSI Technology | ||
6 | 5962-8855206XA | 0 | GSI Technology | ||
7 | W25N04KVTCIR | 0 | GSI Technology | ||
8 | 71V3579S80PFGI8 | 0 | GSI Technology | ||
9 | 7133LA35FB | 0 | GSI Technology | ||
10 | AT25FF161A-SSHN-T | 0 | GSI Technology | ||
11 | GS8640Z36GT-167IV | 0 | GSI Technology | ||
12 | W634GG6NB09I TR | 0 | GSI Technology | ||
13 | GS8662Q07BD-333I | 0 | GSI Technology | ||
14 | 25AA080A-I/SN | 0 | GSI Technology | ||
15 | GS832136AD-250IV | 0 | GSI Technology | ||
16 | IS61WV12816DBLL-10TLI | 3 | GSI Technology | ||
17 | GS88136CGD-200V | 0 | GSI Technology | ||
18 | 7006L20G | 0 | GSI Technology | ||
19 | 71V67903S75BQI | 0 | GSI Technology | ||
20 | GS8662T06BGD-400I | 0 | GSI Technology |