制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 36 Mbit |
组织 | Organization | 1 M x 32 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 220 mA, 230 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8320E32AGT |
类型 | Type | DCD Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | S29JL064J55TFI003 | 0 | GSI Technology | ||
2 | GS81284Z36GB-200IV | 0 | GSI Technology | ||
3 | GS8182R36BGD-250 | 0 | GSI Technology | ||
4 | BR24G08FVJ-3GTE2 | NA | 200 | GSI Technology | |
5 | CY7C1474V33-167BGC | 0 | GSI Technology | ||
6 | SQF-UDMS1-8G-HDE | 0 | GSI Technology | ||
7 | GS81302T38AGD-550I | 0 | GSI Technology | ||
8 | GS8182T36BGD-400 | 0 | GSI Technology | ||
9 | AT28C256-15LM/883 | 0 | GSI Technology | ||
10 | 25LC080AT-I/SN | 0 | GSI Technology | ||
11 | IS25WQ020-JBLE | 0 | GSI Technology | ||
12 | MT25QU128ABA8ESF-0AAT | NA | 10 | GSI Technology | |
13 | 93C56AT-I/ST | 0 | GSI Technology | ||
14 | M95160-DFMN6TP | 0 | GSI Technology | ||
15 | MT25QL256ABA1EW7-0SIT | 0 | GSI Technology | ||
16 | S-24C64CI-K8T3U3 | 0 | GSI Technology | ||
17 | IS43TR16640CL-107MBL | 0 | GSI Technology | ||
18 | LE25S20FD-AH | 3000 | GSI Technology | ||
19 | 24LC02BH-I/MS | 0 | GSI Technology | ||
20 | MTFC64GAPALBH-IT | 2年内 | 2663 | GSI Technology |