制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 36 Mbit |
组织 | Organization | 1 M x 36 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 235 mA, 270 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS832036AGT |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | BU9844GUL-WE2 | NA | 100 | GSI Technology | |
2 | 24FC16-I/SN | 0 | GSI Technology | ||
3 | GLS85LD0512-60-RI-LBTE | 105 | GSI Technology | ||
4 | W29N01GZDIBA | 0 | GSI Technology | ||
5 | 11AA02E48T-I/SN | 0 | GSI Technology | ||
6 | AT24CS32-XHM-T | 0 | GSI Technology | ||
7 | 24AA32AF-I/MS | 0 | GSI Technology | ||
8 | M24C02-WMN6TP | 22+ | 6621 | GSI Technology | |
9 | GS882Z36CD-300I | 0 | GSI Technology | ||
10 | GLS36VF1601G-70-4I-EKE | 0 | GSI Technology | ||
11 | GS81302D38AGD-550I | 0 | GSI Technology | ||
12 | GS842Z18CGB-250 | 0 | GSI Technology | ||
13 | AP-UM004GR13CS-2MST | 0 | GSI Technology | ||
14 | EAN62827101 | 0 | GSI Technology | ||
15 | GS8182Q36BD-167I | 0 | GSI Technology | ||
16 | GS8342DT10BD-400I | 0 | GSI Technology | ||
17 | GS816218DGD-333V | 0 | GSI Technology | ||
18 | GS8342D06BD-500I | 0 | GSI Technology | ||
19 | GS8161E32DGD-250I | 0 | GSI Technology | ||
20 | SST25PF080B-80-4E-QAE | 0 | GSI Technology |