制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 36 Mbit |
组织 | Organization | 2 M x 18 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 195 mA, 230 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS832018AGT |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | CY62148G30-45ZSXIT | 0 | GSI Technology | ||
2 | 72V51443L7-5BBI | 0 | GSI Technology | ||
3 | 6116SA20TDB | 0 | GSI Technology | ||
4 | CY62157EV30LL-45BVXI | 0819*532 | 532 | GSI Technology | |
5 | MR10Q010CSCR | 20000 | GSI Technology | ||
6 | GS81302T07E-450 | 0 | GSI Technology | ||
7 | CG8465ATT | 0 | GSI Technology | ||
8 | MT53E768M64D4HJ-046 WT:A | 0 | GSI Technology | ||
9 | GS832136AD-200IV | 0 | GSI Technology | ||
10 | IS43LD32640B-25BPL-TR | 0 | GSI Technology | ||
11 | AT27C1024-45JU-T | 0 | GSI Technology | ||
12 | 6116LA70DB | 0 | GSI Technology | ||
13 | 7202LA20DB | 0 | GSI Technology | ||
14 | BR24L16F-WE2 | NA | 60 | GSI Technology | |
15 | SST39SF010A-70-4C-WHE | 0 | GSI Technology | ||
16 | 5962-8861007ZA | 0 | GSI Technology | ||
17 | GS81302TT07GE-350 | 0 | GSI Technology | ||
18 | 71V3577S75BQG8 | 0 | GSI Technology | ||
19 | MT35XU01GBBA1G12-0SIT TR | 0 | GSI Technology | ||
20 | PM8617A-F3EIP | 0 | GSI Technology |