制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
最大时钟频率 | Maximum Clock Frequency | 400 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 1.9 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 730 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | DDR-II |
系列 | Series | GS8182S18BGD |
类型 | Type | SigmaSIO DDR-II |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SigmaSIO DDR-II |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | IS43LR16320B-6BLI-TR | 0 | GSI Technology | ||
2 | SST25VF016B-50-4C-S2AF-T | 0 | GSI Technology | ||
3 | GS81302D37AGD-333 | 0 | GSI Technology | ||
4 | 72211L10PFG | 0 | GSI Technology | ||
5 | GS8342D06BD-500 | 0 | GSI Technology | ||
6 | CY7C109D-10VXI | 0 | GSI Technology | ||
7 | CG8171AAT | 0 | GSI Technology | ||
8 | CAT25080YI-GT3JN | 0 | GSI Technology | ||
9 | GLS85LS1016P-S-I-FZJE-ND104 | 0 | GSI Technology | ||
10 | GS81302D37GE-400I | 0 | GSI Technology | ||
11 | GS832272GC-225V | 0 | GSI Technology | ||
12 | GS8662D37BGD-300I | 0 | GSI Technology | ||
13 | IS61DDPB44M18A-400M3L | 0 | GSI Technology | ||
14 | S29GL128P10FFIS10 | 0 | GSI Technology | ||
15 | W63BH6MBVABI TR | 0 | GSI Technology | ||
16 | SDINBDG4-32G-A | 0 | GSI Technology | ||
17 | GS81302D18AGD-333I | 0 | GSI Technology | ||
18 | CY14ME064Q2A-SXQ | 0 | GSI Technology | ||
19 | GS8662Q10BD-300I | 0 | GSI Technology | ||
20 | IS21ES16G-JCLI-TR | n/a | 0 | GSI Technology |