制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
最大时钟频率 | Maximum Clock Frequency | 300 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 1.9 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 500 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | QDR-II |
系列 | Series | GS8182D19BGD |
类型 | Type | SigmaQuad II+ |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SigmaQuad-II+ |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8182R18BD-333 | 0 | GSI Technology | ||
2 | 71V35761S200PFG8 | 0 | GSI Technology | ||
3 | S25FL127SABNFV100 | 0 | GSI Technology | ||
4 | GS8342Q07BGD-357 | 0 | GSI Technology | ||
5 | W97AH2NBVA1I | 0 | GSI Technology | ||
6 | GD25LD20CEIGR | 0 | GSI Technology | ||
7 | S29GL064S70TFI023 | 0 | GSI Technology | ||
8 | BR25S640FVM-WTR | NA | 50 | GSI Technology | |
9 | M95512-DRDW8TP/K | 0 | GSI Technology | ||
10 | 34AA02-E/P | 0 | GSI Technology | ||
11 | TC58NYG1S3HBAI6 | 0 | GSI Technology | ||
12 | W29N01HWDINF | 0 | GSI Technology | ||
13 | S29AL008J70BFI022 | 0 | GSI Technology | ||
14 | IS61NLP102418-200TQLI | 0 | GSI Technology | ||
15 | GS81302Q18AGD-333I | 0 | GSI Technology | ||
16 | GS8182D08BGD-250 | 0 | GSI Technology | ||
17 | GS8182Q08BD-300M | 0 | GSI Technology | ||
18 | M24C08-DRDW3TP/K | 0 | GSI Technology | ||
19 | 24LC32AF-E/SM | 0 | GSI Technology | ||
20 | GLS85VM1002E-S-I-LFWE-ND219 | 0 | GSI Technology |