制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | N |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 36 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 255 mA, 260 mA |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 125 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-119 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816236DB |
类型 | Type | Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 21 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8182D19BD-375I | 0 | GSI Technology | ||
2 | GS8162Z18DGD-200I | 0 | GSI Technology | ||
3 | M95080-RDW6TP | 0 | GSI Technology | ||
4 | AS7C31024B-20TCN | 0 | GSI Technology | ||
5 | 34AA02-I/P | 0 | GSI Technology | ||
6 | 25LC040AT-H/SN | 0 | GSI Technology | ||
7 | GS8161E36DGT-200 | 0 | GSI Technology | ||
8 | GS8320Z18AGT-333 | 0 | GSI Technology | ||
9 | 71V124SA15TYGI8 | 0 | GSI Technology | ||
10 | 24LC024-E/PG | 0 | GSI Technology | ||
11 | GS832136AD-250I | 0 | GSI Technology | ||
12 | GS842Z36CGB-200I | 0 | GSI Technology | ||
13 | GS8182D09BGD-375 | 0 | GSI Technology | ||
14 | CY7C1441KV33-133BZXI | 0 | GSI Technology | ||
15 | GS8161E36DGD-333IV | 0 | GSI Technology | ||
16 | GS8342D38BD-500M | 0 | GSI Technology | ||
17 | GS880E36CGT-250I | 0 | GSI Technology | ||
18 | GS8161E18DD-150I | 0 | GSI Technology | ||
19 | GS832236AGB-333I | 0 | GSI Technology | ||
20 | BR24G64FV-3GTE2 | NA | 100 | GSI Technology |