制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | N |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 36 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 210 mA, 210 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-119 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816236DB |
类型 | Type | Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 21 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | AS4C128M16D3LB-12BCN | 0 | GSI Technology | ||
2 | IS61WV102416EDBLL-10BLI-TR | 0 | GSI Technology | ||
3 | GS864418GE-200IV | 0 | GSI Technology | ||
4 | MT53E512M16D1FW-046 WT:D | 0 | GSI Technology | ||
5 | AS4C128M16D3C-93BCN | 0 | GSI Technology | ||
6 | M95010-WMN6P | 1400 | 1400 | GSI Technology | |
7 | VTDU31PC064G | 0 | GSI Technology | ||
8 | IS21ES08G-JQLI | n/a | 0 | GSI Technology | |
9 | IS64LPS204818B-166TQLA3-TR | 0 | GSI Technology | ||
10 | AT28C010-12EM/883 | 0 | GSI Technology | ||
11 | W71NW20GD3GW | 0 | GSI Technology | ||
12 | DS1225AB-70IND+ | 0 | GSI Technology | ||
13 | GS8662T09BD-300 | 0 | GSI Technology | ||
14 | GS8672D36BE-333I | 0 | GSI Technology | ||
15 | GS8321Z36AD-200IV | 0 | GSI Technology | ||
16 | GS881E18CGD-200V | 0 | GSI Technology | ||
17 | GS8662T10BGD-400I | 0 | GSI Technology | ||
18 | AS4C128M16D3LC-12BIN | n/a | 0 | GSI Technology | |
19 | AS7C4098A-12TCN | 0 | GSI Technology | ||
20 | GS8672D37BE-333 | 0 | GSI Technology |