制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 4 ns |
最大时钟频率 | Maximum Clock Frequency | 400 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 255 mA, 335 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816218DGD |
类型 | Type | Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 36 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | S-24C08DI-K8T3U5 | 0 | GSI Technology | ||
2 | EP10-002257 | 0 | GSI Technology | ||
3 | SST39VF401C-70-4I-B3KE | 0 | GSI Technology | ||
4 | 24AA044T-I/ST | 0 | GSI Technology | ||
5 | S25FL128SAGBHIA10 | 15257 | GSI Technology | ||
6 | GS8342Q10BGD-333 | 0 | GSI Technology | ||
7 | IS25WP064D-JBLE | n/a | 801 | GSI Technology | |
8 | S25FL256SAGNFV000 | n/a | 27 | GSI Technology | |
9 | GS832218AGB-200 | 0 | GSI Technology | ||
10 | 11AA161-I/SN | 0 | GSI Technology | ||
11 | S25FL512SAGBHID10 | 0 | GSI Technology | ||
12 | AT88SC12816C-PU | 0 | GSI Technology | ||
13 | GS816218DGB-250 | 0 | GSI Technology | ||
14 | S29GL064N90FFI022 | 400 | GSI Technology | ||
15 | GS81302Q37AGD-400I | 0 | GSI Technology | ||
16 | CY62157G18-55BVXI | 0 | GSI Technology | ||
17 | GS8342D36BD-300I | 0 | GSI Technology | ||
18 | MR5A16ACYS35 | 0 | GSI Technology | ||
19 | MT29F4G08ABAEAH4:E TR | 0 | GSI Technology | ||
20 | GS8342TT20BD-400I | 0 | GSI Technology |