制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 190 mA, 195 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816218DGD |
类型 | Type | Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MT41K512M8DA-107 IT:P TR | 0 | GSI Technology | ||
2 | GS8160E32DGT-200IV | 0 | GSI Technology | ||
3 | S29GL128S90FHSS60 | 0 | GSI Technology | ||
4 | GS864436GE-200I | 0 | GSI Technology | ||
5 | GS816136DD-250IV | 0 | GSI Technology | ||
6 | GS832236AD-250I | 0 | GSI Technology | ||
7 | 93C56AT-I/ST | 0 | GSI Technology | ||
8 | GS816118DGT-333V | 0 | GSI Technology | ||
9 | BR93G86FVJ-3BGTE2 | NA | 100 | GSI Technology | |
10 | IS25LQ032B-JKLE | 0 | GSI Technology | ||
11 | GS816218DGB-250V | 0 | GSI Technology | ||
12 | AS4C4M16SA-6TCNTR | 0 | GSI Technology | ||
13 | W25R128FWSIQ | 0 | GSI Technology | ||
14 | SST25PF080B-80-4C-QAE | 0 | GSI Technology | ||
15 | W25Q64FWSSIG TR | 0 | GSI Technology | ||
16 | CY14B108N-BA25XI | 630 | GSI Technology | ||
17 | GS88032CGT-200I | 0 | GSI Technology | ||
18 | MTFC4GACAJCN-4M IT | 18+ | 2000 | GSI Technology | |
19 | GS816118DGD-150 | 0 | GSI Technology | ||
20 | GS8161E18DGD-150V | 0 | GSI Technology |