制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 190 mA, 200 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-119 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816218DGB |
类型 | Type | Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 21 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8342DT37BGD-350I | 0 | GSI Technology | ||
2 | AS7C4098A-15TCN | 0 | GSI Technology | ||
3 | S34ML04G100TFI003 | 1000 | GSI Technology | ||
4 | GS8160E32DGT-200V | 0 | GSI Technology | ||
5 | 24FC512T-I/ST | 172500 | GSI Technology | ||
6 | GS8161E18DD-333IV | 0 | GSI Technology | ||
7 | W25N512GWPIR | 0 | GSI Technology | ||
8 | S25FL256SAGBHVB00 | 0 | GSI Technology | ||
9 | 25LC160DT-H/SN | 0 | GSI Technology | ||
10 | 72V265LA10TFG | 0 | GSI Technology | ||
11 | S29GL512S11DHV010 | 0 | GSI Technology | ||
12 | GS8322Z18AGB-200IV | 0 | GSI Technology | ||
13 | CY62147GE18-55ZSXI | 0 | GSI Technology | ||
14 | GS881Z18CGT-300I | 0 | GSI Technology | ||
15 | GS88136CGT-333 | 0 | GSI Technology | ||
16 | W66BL6NBUAFI | 0 | GSI Technology | ||
17 | GS816236DD-200M | 0 | GSI Technology | ||
18 | GS8342T20BGD-400 | 0 | GSI Technology | ||
19 | AS7C1024B-20TCN | 0 | GSI Technology | ||
20 | S29GL01GT11TFV020 | 0 | GSI Technology |