制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 36 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 333 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 240 mA, 310 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8161E36DGD |
类型 | Type | DCD Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | AS7C38096B-10BIN | 0 | GSI Technology | ||
2 | M24C16-FMN6P | 0 | GSI Technology | ||
3 | AT24C08D-XHM-B | 0 | GSI Technology | ||
4 | IS42S86400D-7TLI | 0 | GSI Technology | ||
5 | GLS85VM1064B-M-I-LFWE-ND212 | 0 | GSI Technology | ||
6 | 25AA256-E/ST | 0 | GSI Technology | ||
7 | GS881Z18CGD-200I | 0 | GSI Technology | ||
8 | GS816118DD-250I | 0 | GSI Technology | ||
9 | W6351G6KB-12 | 0 | GSI Technology | ||
10 | GS81313LQ18GK-800I | 0 | GSI Technology | ||
11 | SST26VF016BT-104I/MF | 0 | GSI Technology | ||
12 | 24CW1280-I/ST | 0 | GSI Technology | ||
13 | IS45S16800F-6TLA1 | 0 | GSI Technology | ||
14 | DS1245Y-120IND+ | 0 | GSI Technology | ||
15 | GS8342DT07BD-300I | 0 | GSI Technology | ||
16 | GS816236DGB-150IV | 0 | GSI Technology | ||
17 | S29GL064N90FFIS40 | 0 | GSI Technology | ||
18 | GS8342S08BGD-300 | 0 | GSI Technology | ||
19 | AT25FF081A-SHN-B | 0 | GSI Technology | ||
20 | GS74116AGX-10 | 0 | GSI Technology |