制造商 | Manufacturer | GSI Technology |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 32 |
访问时间 | Access Time | 4.5 ns |
最大时钟频率 | Maximum Clock Frequency | 333 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 280 mA, 335 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8161E32DD |
类型 | Type | DCD Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 36 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MT53E4D1AEG-DC TR | 0 | GSI Technology | ||
2 | AP-UM004GT40EG-2T | 0 | GSI Technology | ||
3 | AT88SC0104C-MJ | 0 | GSI Technology | ||
4 | GS88236CGD-200V | 0 | GSI Technology | ||
5 | MT53B128M32D1DS-062 AIT:A TR | 0 | GSI Technology | ||
6 | IS25WP064-JLLE-TR | 0 | GSI Technology | ||
7 | GS81302DT10GE-300 | 0 | GSI Technology | ||
8 | W634GU6NB09I | 0 | GSI Technology | ||
9 | 11AA080-I/MS | 0 | GSI Technology | ||
10 | 72245LB10JG | 0 | GSI Technology | ||
11 | CY7C1414KV18-250BZC | 0 | GSI Technology | ||
12 | MT53E768M64D4HJ-046 WT:B | 0 | GSI Technology | ||
13 | MR25H10MDCR | 0 | GSI Technology | ||
14 | GS8161Z32DD-333 | 0 | GSI Technology | ||
15 | S29AS016J70BFI040A | 0 | GSI Technology | ||
16 | GS88032CGT-150 | 0 | GSI Technology | ||
17 | CY7C1413KV18-333BZI | 0 | GSI Technology | ||
18 | GS8662QT37BD-357 | 0 | GSI Technology | ||
19 | IS45S16160J-7CTLA1-TR | 0 | GSI Technology | ||
20 | 93LC46T-I/SN | 0 | GSI Technology |