制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 190 mA, 200 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8161E18DGT |
类型 | Type | DCD Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 36 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS816218DGD-333IV | 0 | GSI Technology | ||
2 | GS8182T08BD-250I | 0 | GSI Technology | ||
3 | GS8182D09BD-375 | 0 | GSI Technology | ||
4 | GS8342S18BGD-350I | 0 | GSI Technology | ||
5 | MT29F2G08ABAEAWP-IT:E | 2年内 | 0 | GSI Technology | |
6 | 24AA64/SN | 0 | GSI Technology | ||
7 | MT25QU128ABB8E12-0AUT | n/a | 12551 | GSI Technology | |
8 | 40060584 | 0 | GSI Technology | ||
9 | GS842Z36CGB-150 | 0 | GSI Technology | ||
10 | GS832136AD-200I | 0 | GSI Technology | ||
11 | AT25512-TH-B | 0 | GSI Technology | ||
12 | GS832218AGB-333 | 0 | GSI Technology | ||
13 | LE25S20XATAG | 0 | GSI Technology | ||
14 | GS8182D09BD-200 | 0 | GSI Technology | ||
15 | 11LC080-E/SN | 0 | GSI Technology | ||
16 | GS8320Z36AGT-333 | 0 | GSI Technology | ||
17 | S25FL127SABNFB100 | 0 | GSI Technology | ||
18 | W25Q32JVXGIQ TR | 0 | GSI Technology | ||
19 | S29JL064J70TFA000 | 0 | GSI Technology | ||
20 | 23K256-E/SN | 600 | GSI Technology |