制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 36 |
访问时间 | Access Time | 4.2 ns |
最大时钟频率 | Maximum Clock Frequency | 375 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 270 mA, 350 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816136DGT |
类型 | Type | Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 36 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 25LC080B-E/ST | 0 | GSI Technology | ||
2 | CY62158H-45ZSXI | 0 | GSI Technology | ||
3 | 8403613LA | 0 | GSI Technology | ||
4 | GS864418E-166I | 0 | GSI Technology | ||
5 | GLS55VD020-60-C-TQWE | 0 | GSI Technology | ||
6 | CAV93C56YE-GT3 | 0 | GSI Technology | ||
7 | 24AA014T-I/MNY | 0 | GSI Technology | ||
8 | SFEM016GB1EA1TO-I-LF-12P-STD | 0 | GSI Technology | ||
9 | AS4C512M8D3LB-12BCNTR | 0 | GSI Technology | ||
10 | IS61NLP25636B-200TQLI-TR | 0 | GSI Technology | ||
11 | 5962-8700204UA | 0 | GSI Technology | ||
12 | GS8662Q07BD-300I | 0 | GSI Technology | ||
13 | GD5F2GQ5REYIGR | 0 | GSI Technology | ||
14 | GS8640Z18GT-200IV | 0 | GSI Technology | ||
15 | MT28EW128ABA1LPC-0SIT | 0 | GSI Technology | ||
16 | IS61NLF25618A-7.5TQLI | 0 | GSI Technology | ||
17 | CY7C1069G30-10BVXI | 0 | GSI Technology | ||
18 | MT53B384M32D2DS-062 AUT:B | 0 | GSI Technology | ||
19 | IS64LPS12832A-200TQLA3-TR | 0 | GSI Technology | ||
20 | 71V30S55TFG | 0 | GSI Technology |