制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 36 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 333 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 240 mA, 310 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816136DGT |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | BR93L86FJ-WE2 | 0 | GSI Technology | ||
2 | GS8162Z36DB-200IV | 0 | GSI Technology | ||
3 | 24LC16BT-E/OT16KVAO | 0 | GSI Technology | ||
4 | GS8342T37BD-333I | 0 | GSI Technology | ||
5 | 11LC010T-I/SN | 0 | GSI Technology | ||
6 | MT28EW01GABA1LPC-0AAT | 0 | GSI Technology | ||
7 | CY14B116S-BZ25XI | 0 | GSI Technology | ||
8 | DS1270Y-70# | 0 | GSI Technology | ||
9 | CY14V101Q3-SFXIT | 0 | GSI Technology | ||
10 | GS8182T37BGD-400I | 0 | GSI Technology | ||
11 | IS61C1024AL-12JLI-TR | 0 | GSI Technology | ||
12 | GS8322Z18AD-250IV | 0 | GSI Technology | ||
13 | GS8342TT19BGD-300I | 0 | GSI Technology | ||
14 | GS8182D36BGD-250 | 0 | GSI Technology | ||
15 | GS816218DGB-250IV | 0 | GSI Technology | ||
16 | 25C080-I/P | 0 | GSI Technology | ||
17 | IS42S16160J-7BL-TR | 0 | GSI Technology | ||
18 | GS81302Q36AGD-333 | 0 | GSI Technology | ||
19 | 25C040T-I/SN | 0 | GSI Technology | ||
20 | GS8322Z18AB-333I | 0 | GSI Technology |