制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 36 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 333 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 240 mA, 310 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816136DGD |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS81302D37AGD-375 | 0 | GSI Technology | ||
2 | DS1330YP-70+ | 0 | GSI Technology | ||
3 | S29GL512S10FAI013 | 0 | GSI Technology | ||
4 | MR2A16AMA35 | 0 | GSI Technology | ||
5 | GS842Z36CB-200I | 0 | GSI Technology | ||
6 | W25R128JVSIQ | n/a | 10000 | GSI Technology | |
7 | 24LC64T-I/MNY | 0 | GSI Technology | ||
8 | BR24T256FJ-WE2 | 16000 | GSI Technology | ||
9 | W25Q10EWSNIG TR | 0 | GSI Technology | ||
10 | 24AA014T-I/OT | 3000 | GSI Technology | ||
11 | GS8182D37BGD-400I | 0 | GSI Technology | ||
12 | SN74ALVC7804-40DL | 0 | GSI Technology | ||
13 | 25LC320AT-E/MS | 0 | GSI Technology | ||
14 | 93LC46A-I/MS | 0 | GSI Technology | ||
15 | BR34L02FVT-WE2 | NA | 100 | GSI Technology | |
16 | GS881E36CGD-150I | 0 | GSI Technology | ||
17 | IS43R16320E-5TL | 0 | GSI Technology | ||
18 | AP-UM002GR31CG-2MST | 0 | GSI Technology | ||
19 | AT25PE80-SSHN-T | 0 | GSI Technology | ||
20 | GS842Z18CGB-200I | 0 | GSI Technology |