制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 32 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 333 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 260 mA, 330 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816132DGT |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | NBT SRAM |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GD25LD10CTIGR | 0 | GSI Technology | ||
2 | GS864018GT-250 | 0 | GSI Technology | ||
3 | MT47H128M16RT-25E AAT:C | 1000 | GSI Technology | ||
4 | 34AA02-I/ST | 0 | GSI Technology | ||
5 | IS42S16160J-6TLI-TR | n/a | 1775 | GSI Technology | |
6 | W25Q32JVTCIM | 0 | GSI Technology | ||
7 | 24LC02BHT-I/MS | 0 | GSI Technology | ||
8 | 71V65603S100PFG8 | 0 | GSI Technology | ||
9 | GS842Z36CB-150I | 0 | GSI Technology | ||
10 | GLS85LD1001T-60-RI-LBTE | n/a | 144 | GSI Technology | |
11 | S34ML01G100TFI5C0 | 0 | GSI Technology | ||
12 | GS816236DGB-150 | 0 | GSI Technology | ||
13 | AS7C38096A-10TIN | 0 | GSI Technology | ||
14 | GS8162Z36DB-250I | 0 | GSI Technology | ||
15 | GS8160Z36DGT-250 | 0 | GSI Technology | ||
16 | GS8342T11BGD-500 | 0 | GSI Technology | ||
17 | 93AA86/P | 0 | GSI Technology | ||
18 | GS8160E32DGT-150IV | 0 | GSI Technology | ||
19 | MT53D512M32D2DS-046 AIT:D | 1 | GSI Technology | ||
20 | M48Z18-100PC1 | 100 | GSI Technology |