制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | N |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 32 |
访问时间 | Access Time | 4.5 ns |
最大时钟频率 | Maximum Clock Frequency | 333 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 260 mA, 315 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816132DD |
类型 | Type | Pipeline/Flow Through |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 36 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MT29F4G08ABAEAH4-ITS:E | 0 | GSI Technology | ||
2 | LE2432RDXATDG | 0 | GSI Technology | ||
3 | 72V51253L7-5BB | 0 | GSI Technology | ||
4 | BR25L020FJ-WE2 | 0 | GSI Technology | ||
5 | W989D2DBJX6E TR | 0 | GSI Technology | ||
6 | GS832018AGT-375 | 0 | GSI Technology | ||
7 | 72240L10TPG | 0 | GSI Technology | ||
8 | AT24C02D-SSHM-B | 2年内 | 10000 | GSI Technology | |
9 | IS25LP080D-JNLA3-TR | 0 | GSI Technology | ||
10 | S25FL064LABMFB003 | 0 | GSI Technology | ||
11 | S25FL512SAGBHEA13 | 0 | GSI Technology | ||
12 | CY62167GN30-45BVXIT | 0 | GSI Technology | ||
13 | M95080-DWDW4TP/K | 0 | GSI Technology | ||
14 | IS61LV5128AL-10TI-TR | 0 | GSI Technology | ||
15 | S34ML04G200BHV003 | 0 | GSI Technology | ||
16 | CY7C25652KV18-400BZI | 0 | GSI Technology | ||
17 | S25FS256SAGMFB003 | 0 | GSI Technology | ||
18 | CY7C1051DV33-12ZSXIT | 0 | GSI Technology | ||
19 | GS8662D20BD-500I | 0 | GSI Technology | ||
20 | 25AA02E48T-I/OT | 42000 | GSI Technology |