制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 190 mA, 195 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816118DGT |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 24AA02E64T-E/SN | 0 | GSI Technology | ||
2 | 7205L12JG8 | 0 | GSI Technology | ||
3 | GS8342T20BD-350I | 0 | GSI Technology | ||
4 | W632GU8NB11I | 0 | GSI Technology | ||
5 | W25Q32JVTCIQ | 202234 | 1139 | GSI Technology | |
6 | GS8182Q18BGD-250 | 0 | GSI Technology | ||
7 | S25FL128SAGMFBG00 | 0 | GSI Technology | ||
8 | S25FL512SAGBHID10 | 0 | GSI Technology | ||
9 | GS78108AGB-12I | 0 | GSI Technology | ||
10 | MT25TL512HBA8ESF-0AAT TR | 0 | GSI Technology | ||
11 | S-93C46BD0I-J8T1G | 0 | GSI Technology | ||
12 | GS8160E32DGT-150 | 0 | GSI Technology | ||
13 | M29F160FB5AN6F2 | 0 | GSI Technology | ||
14 | IS66WVE4M16EALL-70BLI-TR | 0 | GSI Technology | ||
15 | 24FC16T-I/MS | 0 | GSI Technology | ||
16 | BR25L160F-WE2 | 0 | GSI Technology | ||
17 | AT25DF021A-SSHN-B | 0 | GSI Technology | ||
18 | GS8342QT10BD-333I | 0 | GSI Technology | ||
19 | GS8342TT37BGD-350 | 0 | GSI Technology | ||
20 | GS8342DT19BGD-350I | 0 | GSI Technology |