制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 6.5 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 210 mA, 215 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816118DGT |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | BR24S08FVT-WE2 | NA | 100 | GSI Technology | |
2 | GS4576C09GM-25 | 0 | GSI Technology | ||
3 | W25Q16JWSSIM | 0 | GSI Technology | ||
4 | GS8342TT20BGD-400 | 0 | GSI Technology | ||
5 | GS8342Q08BGD-250 | 0 | GSI Technology | ||
6 | W25N01JWSFIG | 0 | GSI Technology | ||
7 | 93LC66B-I/SNG | n/a | 50 | GSI Technology | |
8 | MT53E128M32D2DS-053 WT:A | 2年内 | 10000 | GSI Technology | |
9 | SST39SF020A-55-4I-NHE | 0 | GSI Technology | ||
10 | SFEM032GB1EA1TO-I-HG-12P-STD | 0 | GSI Technology | ||
11 | M24C02-RDW6TP | 15459 | GSI Technology | ||
12 | GS8182T09BGD-200I | 0 | GSI Technology | ||
13 | BR24G128FV-3GTE2 | NA | 100 | GSI Technology | |
14 | BR24T02FJ-WGE2 | NA | 100 | GSI Technology | |
15 | GS8322Z18AGD-150I | 0 | GSI Technology | ||
16 | DS1265AB-100+ | 0 | GSI Technology | ||
17 | DS1245W-150+ | 0 | GSI Technology | ||
18 | GS81302T20AGD-550I | 0 | GSI Technology | ||
19 | IS61WV5128EDBLL-10TLI-TR | 0 | GSI Technology | ||
20 | S25FL064LABNFB011 | 0 | GSI Technology |