制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 160 mA, 180 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS816118DGD |
类型 | Type | Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8342D07BGD-350 | 0 | GSI Technology | ||
2 | GS8342DT10BD-300I | 0 | GSI Technology | ||
3 | GS8161E36DGD-150I | 0 | GSI Technology | ||
4 | IS62WV2568DBLL-45HLI | 0 | GSI Technology | ||
5 | M34F04-WMN6TP | 0 | GSI Technology | ||
6 | AT24CS08-XHM-B | 0 | GSI Technology | ||
7 | MT35XU512ABA1G12-0AUT | 0 | GSI Technology | ||
8 | GS8342QT37BGD-250 | 0 | GSI Technology | ||
9 | GS8182D36BD-250 | 0 | GSI Technology | ||
10 | AS4C4M32D1A-5BCN | 0 | GSI Technology | ||
11 | GS881Z18CGT-333 | 0 | GSI Technology | ||
12 | GS840Z18CGT-250 | 0 | GSI Technology | ||
13 | S29GL128S10FHB010 | 0 | GSI Technology | ||
14 | BU9882FV-WE2 | NA | 30 | GSI Technology | |
15 | MT48LC8M16A2P-6A XIT:L TR | 0 | GSI Technology | ||
16 | IS49NLC36800-25EWBLI | 0 | GSI Technology | ||
17 | GS8182S18BGD-200 | 0 | GSI Technology | ||
18 | GS816218DGB-375 | 0 | GSI Technology | ||
19 | S-24C256CI-J8T1U4 | 0 | GSI Technology | ||
20 | GS8342Q08BGD-300I | 0 | GSI Technology |