制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 36 |
访问时间 | Access Time | 5.5 ns |
最大时钟频率 | Maximum Clock Frequency | 250 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 245 mA, 265 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8160E36DGT |
类型 | Type | DCD Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | S34ML02G200TFV000 | 0 | GSI Technology | ||
2 | GS8182T36BD-333 | 0 | GSI Technology | ||
3 | GS832218AB-200I | 0 | GSI Technology | ||
4 | S29AL016J70FFI022 | 0 | GSI Technology | ||
5 | 25AA256-E/MF | 0 | GSI Technology | ||
6 | GS8182D08BD-200I | 0 | GSI Technology | ||
7 | GS78108AGB-10 | 0 | GSI Technology | ||
8 | GS8182T19BD-300I | 0 | GSI Technology | ||
9 | IS61NLP102418-200TQLI | 0 | GSI Technology | ||
10 | 25AA010AT-I/SN | 3300 | GSI Technology | ||
11 | IS42S16800F-7BLI | 0 | GSI Technology | ||
12 | S99GL128S0020 | 0 | GSI Technology | ||
13 | AT24C256C-SSPD-T | 0 | GSI Technology | ||
14 | 93C56B-E/SN | 2021 | 786 | GSI Technology | |
15 | TH58BVG3S0HTA00 | 391 | GSI Technology | ||
16 | GS8161Z18DGD-250IV | 0 | GSI Technology | ||
17 | W958D6DBCX7I | 0 | GSI Technology | ||
18 | W29N04KZSIBF | 0 | GSI Technology | ||
19 | 24VL014H/ST | 0 | GSI Technology | ||
20 | IS42S16800F-6BL | 0 | GSI Technology |