制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 5.5 ns |
最大时钟频率 | Maximum Clock Frequency | 250 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.7 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 225 mA, 245 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8160E18DGT |
类型 | Type | DCD Synchronous Burst |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 18 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 93C46B-E/SN | 0 | GSI Technology | ||
2 | MTFC4GACAJCN-4M IT | 18+ | 2000 | GSI Technology | |
3 | 25AA040X/ST | 0 | GSI Technology | ||
4 | AT25DN512C-XMHF-B | 0 | GSI Technology | ||
5 | 24AA01HT-I/OT | 0 | GSI Technology | ||
6 | GS8161E36DGT-150IV | 0 | GSI Technology | ||
7 | S25FL256LAGNFN010 | 0 | GSI Technology | ||
8 | GS8161E18DD-200IV | 0 | GSI Technology | ||
9 | GS8182D09BD-250 | 0 | GSI Technology | ||
10 | N25S830HAT22I | 300 | GSI Technology | ||
11 | 24VL014/MNY | 0 | GSI Technology | ||
12 | GS81302Q20AGD-450 | 0 | GSI Technology | ||
13 | GS8162Z18DGB-250I | 0 | GSI Technology | ||
14 | AP-UM004GR13CS-2MSNRT | 0 | GSI Technology | ||
15 | AS7C316096A-10TIN | 0 | GSI Technology | ||
16 | GS8162Z18DB-375I | 0 | GSI Technology | ||
17 | R1LV0216BSB-5SI#B1 | 0 | GSI Technology | ||
18 | GS8342D19BD-300I | 0 | GSI Technology | ||
19 | 24FC04H-I/P | 0 | GSI Technology | ||
20 | GLS27SF020-70-3C-NHE | n/a | 0 | GSI Technology |