制造商 | Manufacturer | GSI Technology |
存储容量 | Memory Size | 144 Mbit |
组织 | Organization | 16 M x 8 |
最大时钟频率 | Maximum Clock Frequency | 350 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 1.9 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 810 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | DDR-II |
系列 | Series | GS81302TT07E |
类型 | Type | SigmaDDR-II+ B2 |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 10 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SigmaDDR-II+ |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8672T37BGE-333 | 0 | GSI Technology | ||
2 | GS78108AB-12I | 0 | GSI Technology | ||
3 | 93AA66AT-I/SN | 2年内 | 4944 | GSI Technology | |
4 | AP-UM002GR40CG-2T | 0 | GSI Technology | ||
5 | S70FL01GSAGBHBC13 | 0 | GSI Technology | ||
6 | MT35XU512ABA2G12-0SIT | 0 | GSI Technology | ||
7 | ANV22AA8WBC25 T | 0 | GSI Technology | ||
8 | GS8321E18AGD-200IV | 0 | GSI Technology | ||
9 | S29GL512S11FHI020 | 0 | GSI Technology | ||
10 | CY62168GE30-45BVXI | 0 | GSI Technology | ||
11 | CY14B101KA-ZS25XI | 0 | GSI Technology | ||
12 | GS8662D38BD-350I | 0 | GSI Technology | ||
13 | CY7C1051DV33-10BAXIT | 0 | GSI Technology | ||
14 | GS82582TT20GE-400I | 0 | GSI Technology | ||
15 | 25LC010AT-I/MNY | 0 | GSI Technology | ||
16 | GS8662S18BD-300I | 0 | GSI Technology | ||
17 | GS81302DT19AGD-400I | 0 | GSI Technology | ||
18 | IS61LV6416-8KL-TR | 0 | GSI Technology | ||
19 | W25N512GVCIG TR | 0 | GSI Technology | ||
20 | IS25WP064A-JLLE | 0 | GSI Technology |