制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 144 Mbit |
组织 | Organization | 8 M x 18 |
最大时钟频率 | Maximum Clock Frequency | 350 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 1.9 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 800 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | DDR-II |
系列 | Series | GS81302T20GE |
类型 | Type | SigmaDDR-II+ |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 10 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SigmaDDR-II+ |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS882Z18CB-300I | 0 | GSI Technology | ||
2 | S29GL512T10FAI013 | 0 | GSI Technology | ||
3 | SDINBDA6-256G-XI1 | 0 | GSI Technology | ||
4 | 7133SA55FB | 0 | GSI Technology | ||
5 | GS8642Z36B-250V | 0 | GSI Technology | ||
6 | W29N01HZDINF TR | 0 | GSI Technology | ||
7 | MT53E256M16D1FW-046 AAT:B TR | 0 | GSI Technology | ||
8 | IS45S16160J-7CTLA1 | 0 | GSI Technology | ||
9 | AT24C08D-SSHM-B | 24 | GSI Technology | ||
10 | 72255LA10PFG | 0 | GSI Technology | ||
11 | MT62F512M64D4EK-031 AUT:B | 0 | GSI Technology | ||
12 | 11AA161T-I/TT | 0 | GSI Technology | ||
13 | AT28HC64BF-12SU | 0 | GSI Technology | ||
14 | GS81302T09GE-250 | 0 | GSI Technology | ||
15 | 70V3379S5BC | 0 | GSI Technology | ||
16 | IS25LP128F-JBLE | 35 | GSI Technology | ||
17 | W632GU6NB-12 TR | 0 | GSI Technology | ||
18 | CY14B101NA-ZS25XI | 0 | GSI Technology | ||
19 | AS4C128M32MD2A-25BINTR | 0 | GSI Technology | ||
20 | S34ML04G300BHV000 | 0 | GSI Technology |