制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 144 Mbit |
组织 | Organization | 4 M x 36 |
最大时钟频率 | Maximum Clock Frequency | 300 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 1.9 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 590 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
存储类型 | Memory Type | DDR |
系列 | Series | GS81302S36AGD |
类型 | Type | SigmaSIO DDR-II |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 10 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SigmaSIO DDR-II |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8320E18AGT-250IV | 0 | GSI Technology | ||
2 | VTDU31PI032G | 0 | GSI Technology | ||
3 | MT40A1G16KH-062E AIT:E TR | 0 | GSI Technology | ||
4 | W634GG6NB-11 TR | 0 | GSI Technology | ||
5 | MT53E256M32D2FW-046 AAT:B TR | 0 | GSI Technology | ||
6 | 93C76CT-E/MNY | 0 | GSI Technology | ||
7 | GS8662DT11BGD-400 | 0 | GSI Technology | ||
8 | 7052L35GB | 0 | GSI Technology | ||
9 | 6116SA25SOGI8 | 0 | GSI Technology | ||
10 | AP-UM256MT23ES-2T | 0 | GSI Technology | ||
11 | 70V657S12BFGI | 0 | GSI Technology | ||
12 | CY15V108QI-20LPXCT | 0 | GSI Technology | ||
13 | MT53E768M32D4DT-046 AUT:E | 0 | GSI Technology | ||
14 | N24C02UVTG | 1 | GSI Technology | ||
15 | S29GL256S11TFIV10 | 0 | GSI Technology | ||
16 | GS8640E36GT-200I | 0 | GSI Technology | ||
17 | MT28EW512ABA1LPC-0SIT TR | 0 | GSI Technology | ||
18 | GS8342D06BD-550I | 0 | GSI Technology | ||
19 | IS61LV2568L-10T | 0 | GSI Technology | ||
20 | MT53D1G64D8NZ-046 WT ES:E | 0 | GSI Technology |