制造商 | Manufacturer | GSI Technology |
RoHS | Rohs | Y |
存储容量 | Memory Size | 144 Mbit |
组织 | Organization | 4 M x 36 |
访问时间 | Access Time | 4 ns |
最大时钟频率 | Maximum Clock Frequency | 400 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 2.3 V |
电源电流—最大值 | Supply Current_Max | 470 mA, 680 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-165 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | GS8128236GD |
类型 | Type | SCD/DCD; PL/FT |
商标 | Brand | GSI Technology |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 10 |
子类别 | Subcategory | Memory & Data Storage |
商标名 | Tradename | SyncBurst |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 71V65703S75BGG8 | 0 | GSI Technology | ||
2 | MT49H8M36SJ-25E:B | 0 | GSI Technology | ||
3 | IS62WV102416DBLL-55TLI | 0 | GSI Technology | ||
4 | BR24L16FV-WE2 | NA | 50 | GSI Technology | |
5 | M93C56-WDW6TP | 0 | GSI Technology | ||
6 | GS8672Q37BE-333 | 0 | GSI Technology | ||
7 | MT29VZZZ7C7DQFSL-046 W.9J7 TR | 0 | GSI Technology | ||
8 | GS81302D19E-300 | 0 | GSI Technology | ||
9 | IS46TR16256B-107MBLA1 | 0 | GSI Technology | ||
10 | GS81302TT19GE-350I | 0 | GSI Technology | ||
11 | ANV22AA8ABC25 T | 0 | GSI Technology | ||
12 | AT24C256C-SSHL-T | 2055 | GSI Technology | ||
13 | IS61NVP51236B-200B3LI-TR | 0 | GSI Technology | ||
14 | 93AA46XT/SN | 0 | GSI Technology | ||
15 | S25FL512SAGBHM210 | 0 | GSI Technology | ||
16 | SST25VF016B-50-4I-QAF | n/a | 93 | GSI Technology | |
17 | S29GL01GS12DHVV10 | 0 | GSI Technology | ||
18 | AT28HC256-12JU | 0 | GSI Technology | ||
19 | CY15V104QI-20LPXCT | 0 | GSI Technology | ||
20 | GS81302QT10GE-300 | 0 | GSI Technology |