制造商 | Manufacturer | Micron Technology |
RoHS | Rohs | Y |
类型 | Type | SDRAM Mobile - LPDDR2 |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | FBGA-216 |
数据总线宽度 | Data Bus Width | 64 bit |
组织 | Organization | 128 M x 64 |
存储容量 | Memory Size | 8 Gbit |
最大时钟频率 | Maximum Clock Frequency | 533 MHz |
访问时间 | Access Time | 5.5 ns |
电源电压-最大 | Supply Voltage_Max | 1.95 V |
电源电压-最小 | Supply Voltage_Min | 1.14 V |
电源电流—最大值 | Supply Current_Max | 100 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 105 C |
系列 | Series | EDB |
封装 | Packaging | Tray |
商标 | Brand | Micron |
产品类型 | Product Type | DRAM |
标准包装数量 | Standard Pack Qty | 1680 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 25AA160BT-I/MS | 0 | Micron Technology | ||
2 | GS8673ET18BGK-500 | 0 | Micron Technology | ||
3 | W9712G6KB25I | 0 | Micron Technology | ||
4 | CY7C1568KV18-400BZC | 0 | Micron Technology | ||
5 | GS8128436B-200IV | 0 | Micron Technology | ||
6 | GS864436E-250I | 0 | Micron Technology | ||
7 | GS8128436B-200V | 0 | Micron Technology | ||
8 | 23K640T-E/ST | 0 | Micron Technology | ||
9 | 5962-8700214ZA | 0 | Micron Technology | ||
10 | GS8662D37BGD-450 | 0 | Micron Technology | ||
11 | CY62157EV30LL-55ZXE | 0 | Micron Technology | ||
12 | IS22ES04G-JQLA1 | n/a | 0 | Micron Technology | |
13 | GS8662T07BGD-350I | 0 | Micron Technology | ||
14 | IS61NLP51236-200B3LI-TR | 0 | Micron Technology | ||
15 | GS8342Q08BD-357 | 0 | Micron Technology | ||
16 | 25AA020A-I/ST | 0 | Micron Technology | ||
17 | 71T75802S150PFG8 | 0 | Micron Technology | ||
18 | SST39VF1601-70-4I-EKE-T | 2年内 | 10000 | Micron Technology | |
19 | BR93G56F-3AGTE2 | n/a | 10 | Micron Technology | |
20 | GS8662DT07BD-400I | 0 | Micron Technology |