制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 117 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 285 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Reel |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V67903S75P |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MT53D512M32D2DS-046 WT:F | 0 | Renesas Electronics | ||
2 | CY7C1360C-166AXC | 2019 | 84 | Renesas Electronics | |
3 | GS8640E36GT-250IV | 0 | Renesas Electronics | ||
4 | S29GL256P90FFCR20 | 0 | Renesas Electronics | ||
5 | AT45DQ321-SHF-T | 0 | Renesas Electronics | ||
6 | 24LC16B-E/ST | 0 | Renesas Electronics | ||
7 | GS8672T20BGE-550 | 0 | Renesas Electronics | ||
8 | CY7S1061GE30-10ZXI | 0 | Renesas Electronics | ||
9 | GS81302DT38AGD-500 | 0 | Renesas Electronics | ||
10 | MT41K512M16HA-107:A | 2年内 | 10000 | Renesas Electronics | |
11 | GS8673ED18BGK-625I | 0 | Renesas Electronics | ||
12 | MTFC8GAMALNA-AAT ES TR | 0 | Renesas Electronics | ||
13 | IS63LV1024L-12BLI | 0 | Renesas Electronics | ||
14 | 7005S55GB | 0 | Renesas Electronics | ||
15 | 71256S70TDB | 0 | Renesas Electronics | ||
16 | 25LC512T-I/SM | 0 | Renesas Electronics | ||
17 | GS81313LQ36GK-800I | 0 | Renesas Electronics | ||
18 | AT25QF128A-SHBHD-T | 0 | Renesas Electronics | ||
19 | GS8342QT10BD-250 | 0 | Renesas Electronics | ||
20 | S25FL256SDPBHIC03 | 0 | Renesas Electronics |