制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 256 k x 36 |
访问时间 | Access Time | 8 ns |
最大时钟频率 | Maximum Clock Frequency | 100 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 230 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-165 |
封装 | Packaging | Tray |
高度 | Height | 1.2 mm |
长度 | Length | 15 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V67703S80 |
类型 | Type | Synchronous |
宽度 | Width | 13 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 136 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | S34ML01G200GHI000 | 0 | Renesas Electronics | ||
2 | THGBMKG9N4LBAIR | 0 | Renesas Electronics | ||
3 | CY7C1049GN30-10ZSXI | 2101 | 110 | Renesas Electronics | |
4 | 71V67703S80BG8 | 0 | Renesas Electronics | ||
5 | MT29GZ6A6BPIET-53IT.112 TR | 0 | Renesas Electronics | ||
6 | GS8673EQ18BK-714 | 0 | Renesas Electronics | ||
7 | MT53D512M64D4RQ-053 WT:E TR | 0 | Renesas Electronics | ||
8 | GS82582T19GE-400I | 0 | Renesas Electronics | ||
9 | 72V51253L6BBG | 0 | Renesas Electronics | ||
10 | GS81314LT18GK-120I | 0 | Renesas Electronics | ||
11 | GS81302D38E-350 | 0 | Renesas Electronics | ||
12 | CAV25040YE-GT3 | 0 | Renesas Electronics | ||
13 | 93LC56AT-E/SN | 0 | Renesas Electronics | ||
14 | GS8672D18BE-300M | 0 | Renesas Electronics | ||
15 | ANV32AA1ADK66 T | 0 | Renesas Electronics | ||
16 | GS8321E36AD-375I | 0 | Renesas Electronics | ||
17 | AS4C128M8D3B-12BIN | 0 | Renesas Electronics | ||
18 | GS8673ED18BK-625M | 0 | Renesas Electronics | ||
19 | GS81282Z36GB-200 | 0 | Renesas Electronics | ||
20 | 25AA080T-I/SN | 0 | Renesas Electronics |