制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 256 k x 36 |
访问时间 | Access Time | 3.5 ns |
最大时钟频率 | Maximum Clock Frequency | 166 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 340 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Reel |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V67603S166 |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | Memory & Data Storage |
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1 | CY7C2663KV18-450BZI | 0 | Renesas Electronics | ||
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3 | GS8672T38BGE-633 | 0 | Renesas Electronics | ||
4 | GS8662D06BGD-500I | 0 | Renesas Electronics | ||
5 | 71T75902S85BGG8 | 0 | Renesas Electronics | ||
6 | 71V67603S150BQI8 | 0 | Renesas Electronics | ||
7 | IS61NLP102436B-200TQLI | 0 | Renesas Electronics | ||
8 | GS8644Z18E-250V | 0 | Renesas Electronics | ||
9 | IS43TR16128A-125KBL-TR | 0 | Renesas Electronics | ||
10 | CY7C1061G-10BVXI | 0 | Renesas Electronics | ||
11 | CY62136FV30LL-55ZSXET | 0 | Renesas Electronics | ||
12 | GS8320E32AGT-333V | 0 | Renesas Electronics | ||
13 | GD25VE16CTIG | 0 | Renesas Electronics | ||
14 | GD25Q16ETIGR | 4 | Renesas Electronics | ||
15 | 25AA040T-I/SN | 0 | Renesas Electronics | ||
16 | GS8662D38BD-450M | 0 | Renesas Electronics | ||
17 | CY14B116N-ZSP25XIT | 0 | Renesas Electronics | ||
18 | GS8182T19BD-300 | 0 | Renesas Electronics | ||
19 | GS8662QT19BD-200 | 0 | Renesas Electronics | ||
20 | S25FL512SAGMFVG11 | 0 | Renesas Electronics |