制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 8.5 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 245 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Reel |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V65903S85 |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | Memory & Data Storage |
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1 | 72V251L15JGI8 | 0 | Renesas Electronics | ||
2 | MT53E256M32D2FW-046 AUT:B TR | 0 | Renesas Electronics | ||
3 | GS882Z18CGB-250IV | 0 | Renesas Electronics | ||
4 | GS81302R09E-333I | 0 | Renesas Electronics | ||
5 | AS4C256M16D3B-12BINTR | 0 | Renesas Electronics | ||
6 | CAT25080VI-GT3 | 0 | Renesas Electronics | ||
7 | 24AA01-I/MS | 0 | Renesas Electronics | ||
8 | BR93H56RFJ-2CE2 | NA | 100 | Renesas Electronics | |
9 | 71V30S55TFG | 0 | Renesas Electronics | ||
10 | S25FL128LAGBHV030 | 0 | Renesas Electronics | ||
11 | IS43LR32320B-6BL-TR | 0 | Renesas Electronics | ||
12 | FM25L04B-DG | 0 | Renesas Electronics | ||
13 | GS8673EQ18BGK-625I | 0 | Renesas Electronics | ||
14 | SST39VF800A-70-4C-EKE | 1920 | Renesas Electronics | ||
15 | S29GL512T10TFA023 | 0 | Renesas Electronics | ||
16 | GS81302TT07E-450I | 0 | Renesas Electronics | ||
17 | MT29C4G48MAYBBAMR-48 IT TR | 0 | Renesas Electronics | ||
18 | 7024S25G | 0 | Renesas Electronics | ||
19 | MT53E1024M32D4DE-053 AIT:D TR | 0 | Renesas Electronics | ||
20 | IS29GL128-70DLET | 0 | Renesas Electronics |